发明名称 |
Bi-MOS logic circuit having a switch circuit for discharging electrical charge accumulated in a parasitic capacitor. |
摘要 |
<p>Disclosed herein is a Bi-MOS logic circuit comprising first and second NPN transistors (Q11, Q12) forming an output buffer; first and second MOS transistors (N11, N12) for controlling the NPN transistors (Q11, Q12) when the logic circuit is set to a data-latching mode; and third and fourth MOS transistors (N13, N14) for controlling the NPN transistors (Q11, Q12) when the logic circuit is set to a data-inputting mode. The Bi-MOS logic circuit further comprises a switch circuit (SW) for discharging a parasitic capacitor (C) located at the node of the series circuit comprised of the first and second MOS transistors (N11, N12).</p> |
申请公布号 |
EP0381238(A2) |
申请公布日期 |
1990.08.08 |
申请号 |
EP19900102105 |
申请日期 |
1990.02.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;TOSHIBA MICRO-ELECTRONICS CORPORATION |
发明人 |
UENO, MASAJI, C/O INTELLECTUAL PROPERTY DIVISION;OFUSA, KUMI, C/O INTELLECTUAL PROPERTY DIVISION |
分类号 |
H03K19/0944;H03K3/286;H03K3/356;H03K19/00;H03K19/003;H03K19/08 |
主分类号 |
H03K19/0944 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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