| 摘要 |
<p>PURPOSE:To form a high integration, high speed nonvolatile random access memory device by continuously forming specific superconducting material and ferrodielectric material. CONSTITUTION:As a ferrodielectric material 5, a material having a ceramic perovskite structure exhibiting hysteresis characteristic of self-generating polarization is employed. As a superconducting material 2, a material having a ceramic perovskite structure exhibiting superconducting characteristic at a relatively high temperature is employed. In order to manufacture a memory array of these materials, an insulating film 3 is formed on a semiconductor substrate 4, a superconductor material 2 is formed on the film 2, and wirings are then formed. Thereafter, the materials 5 and 1 are continuously deposited in the same manufacturing apparatus. The material 1 may be the same or different material as or from the material 2. The material 1 is wired, and the material 5 is then etched. Thus, since both the ferrodielectric and superconductor materials can be provided in a semiconductor device, a large capacity (large scale integration).high speed semiconductor device can be formed.</p> |
