VERFAHREN ZUR HERSTELLUNG VON HALBLEITERKAPAZITAETSDIODEN,申请号DD19870310635-传众专利搜索

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发明名称	VERFAHREN ZUR HERSTELLUNG VON HALBLEITERKAPAZITAETSDIODEN
摘要
申请公布号	DD281486(A5)	申请公布日期	1990.08.08
申请号	DD19870310635	申请日期	1987.12.17
申请人	KARL-MARX-UNIVERSITAET,DD	发明人	PICKENHAIN,RAINER,DD;SCHWETLICK,STACIA,DD;SEIFERT,WERNER,DD;BIEHNE,GISELA,DD
分类号	H01L21/205;H01L29/207;H01L29/93;(IPC1-7):H01L29/93	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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