Memory device.

摘要

A memory device comprises a base plate (10) with a memory element supporting layer (14), a probe (18) with a pointed tip portion, and a fine scan element (20) for causing the probe (18) to scan over the surface of the memory element supporting supporting layer (14). When the probe (18) is approached to the surface of the memory element supporting layer (14) and a suitable bias voltage is applied across the probe (18) and the memory element supporting layer (14), a tunnel current is cause to flow therebetween and a specific region of the surface of the supporting layer (14) is excited. The excited region can adsorb a memory element (16), such as one molecule di-(2-ethylhexyl) phthalate. By causing the memory element (16) to be adsorbed selectively on the memory element supporting layer (14), data is recorded in the form of a projection-and-recess pattern. The recorded data can be read out by observing the surface configuration of the supporting layer (14) in accordance with the principle of an STM (scanning tunneling microscope).