发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To improve the data readout speed by connecting a 1st wiring element located at a sense amplifier circuit block side and a 2nd wiring element located opposite to the sense amplifier circuit block side at both ends of the wiring only. CONSTITUTION:A slit SLIT extended in the prolonged direction is formed in a wiring SAN and the 1st wiring element SAN 1 located at the side of a sense amplifier circuit block 10 with respect to the slit SLIT and the 2nd wiring element SAN 2 located opposite to the sense amplifier circuit block 10 are connected only at both ends of the wiring and plural sense amplifier circuits 10 are connected in common to the wiring element SAN 1. Thus, the current source 2 and the sense amplifier circuit SAMn parted most from the current source 2 are connected by the 2nd wiring element SAN 2 and the voltage drop due to the parasitic resistance of the wiring is reduced. Thus, each sense operating speed of the sense amplifier circuit close to the current source and the sense amplifier circuit apart from the current source is made nearly equal to each other, thereby improving the data readout speed.
申请公布号 JPH02199695(A) 申请公布日期 1990.08.08
申请号 JP19890018686 申请日期 1989.01.27
申请人 MATSUSHITA ELECTRON CORP 发明人 SUMI TATSUMI
分类号 G11C11/409;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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