Semiconductor devices incorporating multilayer interference regions
摘要
A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
申请公布号
US4947223(A)
申请公布日期
1990.08.07
申请号
US19870091560
申请日期
1987.08.31
申请人
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY
发明人
BIEFELD, ROBERT M.;DRUMMOND, TIMOTHY J.;GOURLEY, PAUL L.;ZIPPERIAN, THOMAS E.