发明名称 Semiconductor devices incorporating multilayer interference regions
摘要 A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.
申请公布号 US4947223(A) 申请公布日期 1990.08.07
申请号 US19870091560 申请日期 1987.08.31
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 BIEFELD, ROBERT M.;DRUMMOND, TIMOTHY J.;GOURLEY, PAUL L.;ZIPPERIAN, THOMAS E.
分类号 G02F1/21;G02F3/02;H01S3/1055;H01S5/042;H01S5/183;H01S5/343 主分类号 G02F1/21
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