PRODUCTION OF SINGLE CRYSTAL DIAMOND

摘要

PURPOSE:To obtain the subject single crystal diamond in which lattice defects are remarkably reduced in comparison with the conventional materials by carrying out growth of a diamond using the vapor phase method on the surface of a cubic single crystal silicon carbide produced on a graphite as the base material using the chemical vapor phase deposition method. CONSTITUTION:A cubic polycrystalline silicon carbide film is formed on a graphite as the base material by the chemical vapor deposition method and the resultant polycrystalline silicon carbide film is reduced to powder to collect particles of single crystal silicon carbide. On the surface of the obtained single crystal particles after crystal growth or without that, diamond is grown by the vapor phase method. Reduction of the above-mentioned polycrystalline film to powder can provide single crystal particles having about 0.1-1.0mm diameter depending on the production methods. The resultant particles can be used as a base material for growth of single crystal diamond film without further treatment for some uses and a single crystal large (e.g. order of 3-10mm) enough to be used as a semiconductor device, etc., finally can be produced by continuing the growth using the resultant single crystal particle as a neucleus in an atmosphere for deposition of beta-SiC (cubic silicon carbide) film in case further increase of the size of the base material is required.