| 摘要 |
The problem of spurious inclusions of excess Group V material in the growth of III-V crystals is reduced by including, along with the raw material (12) in the crucible, a quantity (13) of the elemental Group V material and encapsulating with boric oxide (14). The crucible is contained within a growth vessel (19) which is in turn contained within a pressure vessel (16) which is first evacuated and then filled to a high pressure with an inert gas such as argon. The inert gas is one which is lighter in weight than the vaporized Group V material, and which is at a higher pressure than the equilibrium pressure of the vaporized Group V material at the melting temperature of the III-V compound. The vaporized Group V material displaces the argon in the growth vessel (19). The inventive process also reduces defects in the grown crystal.
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