SEMICONDUCTOR DEVICE INCLUDING AN EPITAXIAL LAYER ON A LATTICE-MISMATCHED SINGLE CRYSTAL SUBSTRATE

摘要

SEMICONDUCTOR DEVICE INCLUDING AN EPITAXIAL LAYER ON A LATTICE-MI SMATCHED SINGLE CRYSTAL SUBSTRATE Dislocation-free epitaxial layers on the surfaces of lattice mi smatched single crystal substrates, such as germanium or gallium arsenide on silicon, can be grown provided the surfaces are suitably patterned, such as castellated or porous.