Backside metallization scheme for semiconductor devices

摘要

A backside metallization scheme for semiconductor devices includes a vanadium layer (16) disposed on the backside (14) of a wafer (10) and a silver layer (18) disposed on the vanadium layer (16). An optional intermediate layer (20) comprising either a mixture of vanadium and silver or nickel may be disposed between the vanadium layer (16) and the silver layer (18). The vanadium layer (16) exhibits excellent adhesion characteristics on the backside (14) of wafers (10) having a finish at least as fine as a 300 grit equivalency while the silver layer (18) exhibits excellent solderability characteristics.