发明名称 |
STRUCTURE FOR A LATCHUP ROBUST GATE ARRAY USING THROUGH WAFER VIA |
摘要 |
A structure, method and a design structure for preventing latchup in a gate array. The design structure including: a NFET gate array and a PFET gate array in a substrate; an electrically conductive through via extending from a bottom surface of the substrate toward a top surface of the substrate the NFET gate array and PFET gate array, the through via electrically contacting the P-well.
|
申请公布号 |
US2009152593(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080043212 |
申请日期 |
2008.03.06 |
申请人 |
CHAPMAN PHILLIP FRANCIS;COLLINS DAVID S;VOLDMAN STEVEN H |
发明人 |
CHAPMAN PHILLIP FRANCIS;COLLINS DAVID S.;VOLDMAN STEVEN H. |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|