Charge-transfer sense amplifier for dram and operating method therefor

摘要

A charge-transfer sense amplifier which is connected to a pair of bit lines includes a flip-flop type sense amplifier comprising cross-coupled transistors, a pair of charge transfer elements provided between the flip-flop type sense amplifier and the pair of bit lines, and elements for precharging nodes between the charge transfer elements and the flip-flop type sense amplifier to an "H" level. There is additionally provided a pair of coupling capacitances for capacitively coupling respective gates of the charge transfer elements to a pair of bit lines in a cross-coupling configuration. A circuit device for precharging respective gates of the charge transfer elements brings the charge transfer elements into substantially a cut-off state. This configuration enables the charge-transfer sense amplifier and a one-half Vcc precharge scheme to be effectively combined.