FERRODIELECTRIC MEMORY

摘要

PURPOSE:To attain a reading operation with no inversion of the spontaneous polarization and with no destruction of the recorded data by preparing a thin film having the asymmetrical polarization-electric field hysteresis characteristics and applying the voltage corresponding to a desired action. CONSTITUTION:Each of plural memory cells has a ferrodielectric capacitor of a structure which includes a ferrodielectric thin film 4 having the asymmetrical polarization-electric field hysteresis and held between the electrodes 3 and 5 made of an MgO thin film 2. These memory cells are formed on a substrate 1. In a writing mode the voltage higher than a resistant electric field is applied to the film 4 from a writing action circuit. Then the voltage lower than the resistant electric field formed after a writing operation is applied to the film 4 from a reading action circuit in a reading mode. Thus the forward or adverse remaining polarization is acquired to the voltage and stored in the ferrodielectric capacitor. Thus a reading action is attained without inverting the spontaneous polarization nor destructing the recorded data.