| 摘要 |
PURPOSE: To improve the energy resolution of a radiation detector by extending a high-low junction formed on one flat surface of a wafer to the edge of the wafer and an annular area on the peripheral edge of the rear flat surface of the wafer. CONSTITUTION: An n<+> -n junction 6' is formed by forming an n<+> -type silicon surface area 6 by doping the flat front surface 2, the edge 3, and the peripheral annular area 4 of the rear flat surface 4 of a circular n<-> -type silicon wafer 1 with phosphorus. Then a p<+> -n junction 8' is formed by forming a p<+> -type silicon area 8 by doping the central area 7 of the rear surface 5 with boron. The annular area 9 between the periphery of the n<+> -n junction 6' and the p<+> -n junction 8' is coated with a silicon dioxide insulating ring 10. Thus a junction for rectification is formed in a planar form. Therefore, the energy resolution of a radiation detector can be improved by reducing the junction capacitance and series resistance.
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