| 摘要 |
PURPOSE:To obtain a semiconductor device wherein disconnection of metal wiring is hard to generate in a contact part, and the contact structure is excellent in flatness by providing an upper insulating layer with a taper type aperture. CONSTITUTION:The title device is provided with the following; a conducting layer 12 formed in a silicon semiconductor substrate 11 or a conducting layer composed of polycrystalline silicon formed on the semiconductor substrate, a first insulating layer 13 which is formed so as to cover at least the conducting layer 13 and has an aperture at a specified position on the conducting layer 12, a second insulating layer 14 which is formed on the first insulating layer 13 and has a taper type aperture on the aperture part of the first insulating layer 13, polycrystalline silicon 15 which is buried in the apertures formed in the first and the second insulating layers 13, 14, and a wiring layer 16 which is formed so as to cover at least the taper type aperture formed in the second insulating layer 14 and is electrically connected with the conducting layer 12 via the polycrystalline 15. |
