Semiconductor device in insulated wells - has reduced series resistance out to use of highly doped polycrystalline layer as dopant source

摘要

The devices consist of a semiconductor substrate (1), an one active region (10a,b) and electrode connections (9,17). The feature is that the electrodes (9,17) are connected to a polycrystalline layer (30a) which has been highly doped, and a diffusion layer (30b) of the same conductivity type formed adjacent by diffusion of dopant from a polycrystalline layer. The active areas are pref. e separated by an insulating layer (2) and contain devices including diffused layers (5,6,13,14) in the top surface of the r regions which together with the electrodes (9,17) form e.g. bipolar or MOS-transistors. USE/ADVANTAGE - Allows formationm of low resistance, more highly doped diffusion layer in single crystalline region to form improved collector of drain contact for devicse made in wells. Lower ON-resistance for field-effect transistors and lower collector-emitter saturation voltage for bipolar transistors.