| 摘要 |
Provided is a tunnel field effect transistor (TFET) and manufacturing method thereof. The TFET comprises: a first doping type substrate (110); two drain regions (120), respectively provided on two opposite sides of the first doping type substrate (110); a first epitaxial layer (130), provided on the first doping type substrate (110) and the two drain regions (120); two source regions (140), provided on the first epitaxial layer (130), and each of the source regions (140) being corresponding to one of the drain regions (120); a gate region (150) and gate dielectric layer (160), the gate region (150) provided between the two source regions (140) and provided on the first epitaxial layer (130) via the gate dielectric layer (160), and the gate dielectric layer (160) provided between the gate region (150) and the two source regions (140). The TFET has a higher driving current, a steep sub-threshold swing, a smaller leakage current, and a higher chip integration density. |
