| 摘要 |
PURPOSE:To make the semiconductor device surface as a grounded surface, without using a high-temperature treatment of prolonged-period, by a method wherein a VIP insulator layer separating structure is used as a grounding structure for a semiconductor substrate. CONSTITUTION:A thin polycrystalline Si layer 18 is formed on a nitride film 16 and is heat-oxidation for the formation of an SiO2 film 17, except where the bottom of the V- shaped groove is located. Next, the SiO2 film 17 is removed and, with the polycrystalline Si film 18 remaining along the bottom of the V-shaped groove acting as a mask, the nitride film 16 covering the slopes forming the V-shaped groove is removed. The groove slopes are further heat-oxidated for the thickening of the SiO2 film 19 and for the removal of the remaining polycrystalline Si film 18, nitride film 16 and a thin SiO2 film 15 beneath the nitride film 16. Next, by CVD technique polycrystalline Si is made thick enough to fill up the V-shaped groove in a doping process. Lapping follows wherein a polycrystalline Si 20 is completely removed with the exception of the portion in the V-shaped groove. The surface of the polycrystalline Si 20 is subjected to heat oxidation for the formation of a thick SiO2 film 21, wherein an opening is provided by photoetching wherein a ground electode 23 is built for the establisment of contact with the polycrystalline Si 20. |
