| 摘要 |
PURPOSE:To obtain high reliability at a low cost by a method wherein a polycrystalline silicon semiconductor thin film which is constituted of p-type or n-type valence electron control atoms and whose particle diameters are within a specific range is used, an amount of specific atomic % is contained in hydrogen atoms and an i-type semiconductor layer is constituted of an unsingle-crystal silicon semiconductor. CONSTITUTION:This is a photovoltaic element whose photovoltaic power is generated by a junction of a p-type semiconductor layer 105, an i-type semiconductor layer 104 and an n-type semiconductor layer 103; at least one of either the p-type semiconductor layer 105 or the n-type semiconductor layer 103 out of the semiconductor layers is a polycrystalline semiconductor thin film which is constituted of aluminum atoms, nitrogen atoms and hydrogen atoms and/or fluorine atoms and p-type or n-type valence electron control atoms and whose particle diameters are 50 to 900Angstrom ; an amount of 0.5 to 7 atomic % are contained in the hydrogen atoms; the i-type semiconductor layer 104 is constituted of an unsingle-crystal silicon semiconductor which is composed of silicon atoms and at least hydrogen atoms and/or fluorine atoms. |
