| 摘要 |
PURPOSE:To form a high-performance device on a low-cost substrate by a method wherein channels of thin-film transistors are formed on side wall parts of patterns of a first semiconductor thin film and a second semiconductor thin film. CONSTITUTION:When an n-channel thin-film transistor is manufactured at an end part of a pattern of a first semiconductor thin film 23 and a p-channel thin-film transistor is manufactured at an end part of a pattern of a second semiconductor thin film 25, a first conductive layer 22 is constituted of a semiconductor thin film containing n-type impurities such as P, As or the like and a third conductive layer 26 is constituted of a semiconductor thin film containing p-type impurities such as B or the like. In addition, as a second conductive layer 24, a semiconductor thin film containing the n-type impurities is arranged on the side coming into contact with the first semiconductor thin film 23 while a semiconductor thin film containing the p-type impurities is arranged on the side coming into contact with the semiconductor thin film 25; it is sufficient to use a conductive layer of a three-layer structure in which a metal film is sandwiched between the semiconductor films. Since a crystal state of the semiconductor thin film may be polycrystalline, they can be manufactured at a low temperature. It is possible to form a high-performance device on a low-cost substrate such as glass or the like. |
