| 摘要 |
An image sensor as a photoelectric conversion device (50) includes a substrate (1), a photodiode (20), a transistor (2), and a planarizing layer (7), the photodiode, the transistor, and the planarizing layer are disposed above the substrate, the planarizing layer includes an opening section (8a, 8b), a tilted section (7a) disposed so as to surround the opening section, and a flat section (7b) adapted to cover the transistor, the photodiode is formed in the opening section, and a reflecting film is formed above the tilted section and the flat section of the planarizing layer. |
