| 摘要 |
PURPOSE:To anneal a wafer having a wide area instantaneously by time- difference emission and multiple reflection between the wafer and a plane mirror by arranging a plurality of flash discharge lamp groups in a plurality of planes adjoined in parallel with the semiconductor wafer and positioning the plane mirror adjacent to the side reverse to a sample base. CONSTITUTION:A plurality of flash discharge lamps 3 are disposed on planes S1, S2 parallel with and adjacent to a wafer 5 on a sample base 4. A plane mirror 6 is positioned in a plane S3 parallel with the planes S1, S2 and adjacent to the side reverse to the base 4. Reflecting plates 6' are positioned as required. A distance H1 from the wafer, a distance H2 up to the mirror and irradiation width L2 are set in consideration of the kind, quantity, etc., of a doping material. A flash surface is shaped by the flash discharge lamps, and the whole regions of the wafer having a wide area can be annealed uniformly and instantaneously by time-difference emission and a multiple reflection effect between the wafer and the mirror. |
