| 摘要 |
<p>A coupled quantum-well electro-optical modulator, whose semiconductor structure is composed of one or of a plurality of successions formed by two layers apt to form quantum wells, of a barrier layer which separates said two layers and of an intrinsic layer which separates the succession from other possible successions, where in presence of an electric field the absorption threshold of the light radiation shifts towards shorter wavelengths.</p> |
