| 摘要 |
PURPOSE:To shorten inverse recovery time by introducing a life time killer only to a main diode region in junction structure in which main and auxiliary diode regions are formed into one Si substrate, the area of the main diode is made smaller than both anode and cathode electrodes and the efficiency of injection of the main diode junction is made higher. CONSTITUTION:A main diode region 1 is formed in such a manner that an N<+> type layer 6, an Ni-type layer 3, a P<+> type layer 4 and the anode electrode 7 are laminated and shaped onto a supporting electrode consisting of the cathode electrode 8. An auxiliary diode region 2 is molded in such a manner that the side surface is contacted with the region 1, the lowermost layer 6 takes N type on the same electrode 8 and completely the same layers as the region 1 are deposited in sections upper than the layer 6, and a P<+>-Ni-N<+> junction is formed as the main diode 1 and a P<+>-Ni-N junction as the auxiliary diode 2. The area of the P<+>-Ni-N<+> junction is formed at value smaller than both the electrodes 7, 8, and the efficiency of injection of the P<+>-Ni-N junction is made lower than the P<+>-Ni-N<+> junction. The life time killer, such as Au, Pt, etc. is injected previously only into the region 1. |
