| 摘要 |
PURPOSE:To permit a thin film to retain high potential by forming a photosensitive body composed of an inorg. surface-modified layer, an a(amorphous)-Si type photoconductive layer, an a-SiC type electrostatic charge transfer layer, and an a-SiC type charge blocking layer. CONSTITUTION:A charge blocking layer 5 made of a-SiC hydride or fluoride doped with a comparatively large amt. of element of group IIIA of the periodic table, such as boron, is formed on a substrate 1. On this layer 5 a charge transfer layer 2 made of a-SiC hydride or fluoride contg. 10-30atomic% C and doped with a comparatively small amt. of element of group IIIA of the periodic table is formed. On this layer 2, a photoconductive layer 3 made of a-Si hydride or fluoride is formed. Further on this layer 3, an inorg. surface-modified layer 4 made of e.g. a-SiC hydride or fluoride is formed. |
