| 摘要 |
<p>PURPOSE:To prevent the mode from being set automatically and mis-setting of an operator by using a detection transistor (TR) so as to detect the state after write or erasure thereby controlling the on/off of the TR in a control circuit. CONSTITUTION:When information is written in memory cells M11, M21 of a memory cell array 1 with a signal from a write circuit 10, the detection memory cell in a write erasure detection circuit 7 is in the write state and when the information of the cells M11, M21 is erased, the erasing state is caused and a detection signal DS is outputted. The detection signal DS passes through a control signal generating section 8 and a mode switching circuit 9 and becomes mode switching signals MS11, MS21 to apply on/off control of two TRs of an output control circuit 2. Thus, the setting of the readout mode after write and the readout mode after erasure is implemented automatically, the judgement by the operator is not required to prevent mis-setting.</p> |
