METHODS FOR CDS-BASED FILM AND ZNO FILM DEPOSITION,申请号CA19870545363-传众专利搜索

发明名称	METHODS FOR CDS-BASED FILM AND ZNO FILM DEPOSITION
摘要	<p>The present invention relates to a method for depositing a CdS-based thin film on a substrate. The method consists of depositing the film from mixed sources in a vacuum system. By varying the stoichiometry of the film, the lattice constants are conveniently controlled to values of other semiconductors for the formation a junction electronic device. The present invention also relates to a method for improving the thermal stability of low resistivity ZnO thin film. The processes can be advantageously used to prepare a double-layer transparent film with low electrical resistivity and with good lattice matching to form good quality optoelectronic devices.</p>
申请公布号	CA1272107(A)	申请公布日期	1990.07.31
申请号	CA19870545363	申请日期	1987.08.26
申请人	QIU, SHU N., 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4;QIU, CINDY X., 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4;SHIH, ISHIANG, 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4	发明人	QIU, SHU N., 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4;QIU, CINDY X., 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4;SHIH, ISHIANG, 3300 BAHAMA STREET, BROSSARD, P.Q., J4Z 2R4
分类号	C23C14/06;C23C14/08;H01L31/0336;H01L31/18;(IPC1-7):C23C14/08;C30B25/16;C23C14/34;C30B25/06	主分类号	C23C14/06
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