发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:To improve noise due to capacitive coupling between bit lines by arranging a bit line belonging to other sense amplifier group between two bit lines connecting to a sense amplifier belonging to each sense amplifier group. CONSTITUTION:Either a drive signal phi1 or a drive signal phi2 only is active by a sense amplifier drive circuit at readout. Sense amplifiers 1, 3,... of a 1st sense amplifier group are driven when the signal phi1 is active, and suppose that a bit line the inverse of BL1 is noted, bit lines BL2, the inverse of BL2 adjacent thereto belong to a sense amplifier 2 of a 2nd sense amplifier group and the signal phi2 is in halt, they are preserved in the precharge state and act like shield wires. Thus, noise via a capacitor C1 is ignored and noise via a capacitor C2 is far smaller than that via the capacitor C1 thereby improving considerably noise caused between bit lines.
申请公布号 JPH02193393(A) 申请公布日期 1990.07.31
申请号 JP19890013640 申请日期 1989.01.23
申请人 SHARP CORP 发明人 KAMEI SOICHIRO
分类号 G11C11/409;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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