METHOD OF FABRICATING NITRIDE FILM

摘要

The present invention relates to a method for fabricating a nitride film, which can easily control compressive stress while stably maintaining a film quality by using an atomic layer deposition method. The method for fabricating a nitride film forms a nitride film with compressive stress on a substrate by performing, at least once, a unit cycle comprising: a first step of supplying source gas to a substrate to adsorb at least a portion of the source gas onto the substrate; a second step of supplying first purge gas to the substrate; a third step of supplying stress control gas containing nitrogen gas (N_2) and reaction gas containing a nitrogen (N) component other than the nitrogen gas (N_2) to the substrate in a plasma state to form a unit deposition film on the substrate; a fourth step of supplying second purge gas to the substrate; and a step of stopping the supply of the source gas and maintaining the pressure inside a chamber lower than that in the first step, after the first step and before the second step.