| 摘要 |
<p>PURPOSE:To prevent a defect of a TFT from being recognized as a defect of an image by dividing a semiconductor layer for constituting a thin film transistor into plural pieces on the drain electrode side or the source electrode side. CONSTITUTION:A semiconductor layer 43 of a thin film transistor (TFT) 32 and a TFT 33 is formed as one body on the source electrode 38 side, and a one-body part 42 of this semiconductor layer is divided into two on the drain electrode 35 side and the drain electrode 47 side and comes to a semiconductor layer 36 and a semiconductor layer 37. Also, the semiconductor layer 36 is connected to the drain electrode 35 and the semiconductor layer 37 is connected to the drain electrode 47. Accordingly, the TFT 32 and the TFT 33 have the same function as two independent TFTs and operate as defect relief use TFTs each other. In such a way, a TFT panel in which even if a defect is generated, it is scarcely recognized as a defect of an image is obtained.</p> |
