| 摘要 |
PURPOSE: To easily control etching selectivity by deciding the etching speed of a material in advance by using the sample of the material and etching the material at such a temperature and pressure that can yield a desired degree of etching selectivity. CONSTITUTION: After a sample 10 to be tested is set on a heater support 12, the inside of a chamber 14 is maintained at a prescribed vacuum with a vacuum pump. While the temperature of the sample 10 is controlled with the heater 12, O2 -microwave plasma is generated by means of a plasma generator 20 and supplied to the chamber 14 through a tube 22. Then the etching speed of two materials forming a compound material when the pressure and temperature are changed is decided and the function to the temperature fluctuation at the selected pressure is detected. Therefore, such a pressure and temperature that yield a desired degree of etching selectivity can be decided. |
