| 摘要 |
PURPOSE:To provide a composite material suitable as high-temperature operating semiconductor elements, etc., by using one surface of a single crystal diamond having electrical insulating properties as a substrate and forming a single crystal cubic boron nitride so as to have the orientation in the same plane thereon. CONSTITUTION:A capsule 3 is placed in a high-temperature and high-pressure producer and a substrate 5 composed of a single crystal diamond having electrical insulating properties and boron nitride powder 4 previously subjected to complete disoxidation treatment are oppositely arranged through a solvent 6. A high pressure is then applied to a pressure medium 2 and the boron nitride powder 4 is simultaneously heated with a heater 1 so as to provide the temperature thereof higher than that of the diamond substrate 5 and the boron nitride powder 4 is dissolved into the solvent 6. Thereby, the power is deposited as cubic boron nitride on the substrate 5 which is at a relatively low temperature to produce a composite material composed of the single crystal diamond substrate 5 and single crystal cubic boron nitride. |
