| 摘要 |
PURPOSE:To suppress a pattern shift at the time of transfer of upper layer resist patterns to a lower layer by using a polymer of a high Si content having an unsatd. bond at the main chain in the molecule and >=2 Si atoms in the side chain to enhancing the resistance to O2 plasma etching. CONSTITUTION:The lower layer resist is formed on a substrate and after the resist is flattened, the upper layer resist formed by adding a UV absorbent to the poly-substd. acetylene including the unsatd. absorbent to the main chain in the molecule and contg. >=2 Si atoms in the side chain, such as poly-4,4,6,6- tetramethyl-4,6-disilane-2-heptyne or poly-4,4,7,7-tetramethyl-4,7-disilane-2-octyne is superposed thereon. The resists are subjected to UV exposing and are heated under a reduced pressure to remove the unreacted UV absorbent. The upper layer resist is then patterned in plasma under the atmosphere contg. O2 and CF4 and the lower layer resist is etched by RIE with the upper layer resist mask. |
