| 摘要 |
<p>PURPOSE:To detect a void formed in an adhesive bond with ease by irradiating a bond surface of a semiconductor substrate which is yielded by bonding semiconductor substrates or by doing the same through an oxide layer with specific wavelength infrared rays. CONSTITUTION:Any void of a bonded silicon semiconductor substrate 4 is inspected by irradiation thereof with 2.0mum or less infrared rays, the silicon semiconductor substrate portion 4 is displaced substantially as a black image on a monitor of a video device 10. On the contrary, the void 11 is displaced on the monitor as a black interference fringe, and hence it is clearly detachable. Thus, the yield of void detection in a silicon semiconductor substrate bonded surface is sharply improved and yields of a dicing process and a polishing process as manufacturing processes thereafter are also increased.</p> |
