发明名称 PROCESSING OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent defect from being produced at a chip cut section by allowing polyimide to absorb lateral vibration of a blade by coating the rear surface of a semiconductor substrate with polyimide prior to dicing. CONSTITUTION:The rear surface of a semiconductor substrate 1 on which a device 2 is coated with polyimide 5 into thickness of 1-40mum, and placed on glue part 10a of a dicing tape 10 for bonding. The dicing lien 3 is cut away therealong using a blade, to separate a chip 6. The rear surface of the semiconductor substrate 1 is coated with the polyimide 5 prior to the dicing in such a manner. This prevents a crack from being produced at the cut section of the chip.</p>
申请公布号 JPH02191358(A) 申请公布日期 1990.07.27
申请号 JP19890010479 申请日期 1989.01.19
申请人 TOSHIBA CORP 发明人 SASAKI SHIGEO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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