| 摘要 |
PURPOSE:To improve the degree of freedom of device design and facilitate a high integrity by a method wherein a plurality of single crystal elements are provided on a substrate and the adjoining elements are brought into contact with each other and spaces surrounded by a plurality of the single crystal elements are filled with space avoided elements. CONSTITUTION:A crystal growth treatment is applied to a substrate 101 having seeds of crystal growth and space avoiding elements 103a-103c are provided at the positions where spaces are produced with a conventional constitution. If the crystal growth treatment is applied to the substrate 101, a single crystal element 104 is made to grow and brought into contact with an adjoining single crystal element 104a to form a grain boundary 105 and also brought into contact with the space avoiding elements 103a and 103b. Therefore, if a semiconductor integrated circuit, an optical device and, etc., are formed on a group of the single crystal element after a levelling treatment, the creation of the spaces which are obstacles against that can be suppressed. With this constitution, the degree of freedom of design and construction can be improved and a high integrally can be realized. |
