| 摘要 |
PURPOSE:To properly conduct exposure corresponding to the thickness of resist in a chip region and a scribe-line region by a method wherein a light-dimming filter is formed on the chip region. CONSTITUTION:A light-dimming filter 2, with which a light transmitting rate is decreased is formed only on a chip region, excluding a scribeline region, on the pattern surface of a glass substrate 1 of reticle or photomask for manufacture of a semiconductor integrated circuit. To be more precise, a metal or metal oxide thin film, with which a light-transmitting rate is decreased, is formed on the chip region of the glass substrate 1 using a vapor deposition or sputtering method, colored glass is coated, the film of the light-dimming filter 2 is formed, and the pattern of the light-dimming filter 2 is formed on the chip region by patterning using a photolithographic technique. As a result, the over-exposure of the chip region can be prevented when a proper exposing operation is conducted on the scribe line by decreasing an incident light, and a proper exposure can be conducted. |
