Process for reducing variations in structure size caused by interference during the structuring of a photoresist film by monochromatic exposure

摘要

In order to reduce variations in structure size caused by interference during the structuring of a photoresist film by monochromatic exposure, the photoresist film is deposited on a planar layer arrangement containing a substrate of at least one layer arranged thereon, being a thickness of 1.5 mu m + k lambda /2 eta in a region 0.02 mu m in width, where k is an integer and eta is the refractive index of the photoresist. The process is used in the production of integrated circuits in a substrate. <IMAGE>