SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a first pin type transistor including a first pin, a first trench formed on the first pin, a first dielectric film formed along inner walls of the first trench, and a first work function metal film of a first conductivity type formed on the first dielectric film in the first trench; a second pin type transistor including a second pin, a second trench formed on the second pin, a second dielectric film formed along the inner walls of the second trench, and a second work function metal film of a first conductivity type formed on the second dielectric film in the second trench; and a third pin type transistor including a third pin, a third trench formed on the third pin, a third dielectric film formed along the inner walls of the third trench, and a third work function metal film of a first conductivity type formed on the third dielectric film in the third trench. The first dielectric film includes a work function adjustment material. The second dielectric film does not include the work function adjustment material. A first thickness of the first work function metal film and a third thickness of the third work function metal film differ from each other.