Semiconductor device containing HEMT and MISFET and method of forming the same

摘要

A semiconductor structure with a MISFET and a HEMT region includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and is different from the first III-V compound layer in composition. A third III-V compound layer is disposed on the second III-V compound layer is different from the second III-V compound layer in composition. A source feature and a drain feature are disposed in each of the MISFET and HEMT regions on the third III-V compound layer. A gate electrode is disposed over the second III-V compound layer between the source feature and the drain feature. A gate dielectric layer is disposed under the gate electrode in the MISFET region but above the top surface of the third III-V compound layer.

主权项

1. A method comprising:
forming a stack of semiconductor layers over a substrate, each semiconductor layer in the stack of semiconductor layers having a different band gap than an adjacent semiconductor layer in the stack of semiconductor layers; forming a capping layer over the stack of semiconductor layers, the capping layer comprising a first source opening, a first drain opening, a second source opening, and a second drain opening; simultaneously forming first and second source and drain features in the respective first and second source and drain openings; forming a first gate opening in the capping layer between the first source feature and the first drain feature; forming a gate dielectric layer in the first gate opening; after forming the gate dielectric layer, forming a second gate opening in the capping layer between the second source feature and the second drain feature; and simultaneously forming a gate electrode layer in the first gate opening and the second gate opening.