| 摘要 |
PURPOSE:To prevent a gate metal from being brought into direct contact with an operating layer, to eliminate the anxiety of a gate leakage and to improve breakdown strength by forming an insulating film on the mesa edge part of the operating layer. CONSTITUTION:AuGe, Ni, Au are, for example, laminated, deposited as source electrode metal 6 and drain electrode metal 7, and ohmic electrodes 6, 7 are formed of high temperature alloy. Then, an insulating film 9 is formed on the whole surface of a wafer by a chemical depositing method, for example so as to intend to eliminate the contact of the edge part of a two-dimensional electron gas layer 5 exposed at the mesa edge part of the operating layer into contact with a gate electrode 8 to be formed later. Thus, the gate is not brought into direct contact with an electron layer by the insulating film 9, thereby avoiding various problems due to the contact of the gate electrode metal with the two-dimensional electron gas layer of an active layer at the mesa edge part. |
