| 摘要 |
<p>With the method for producing EPROMs based on self-alignment using a gate electrode as the mask for impurity ion doping, when selectively removing an oxide film between the control gate electrode and the floating gate electrode, the side surface of control gate electrode can be formed flat without projected and recessed areas by removing a thin film deposited at random on the side surface of the upper control gate electrode. Thus, the desired channel region width can be formed, even when impurity ions are doped, with the gate electrode used as the self-alignment mask. Controllability of EPROM production can, therefore, be remarkably improved.</p> |
