CHEMICAL VAPOR DEPOSITION METHOD FOR THE GAAS THIN FILM

摘要

A chemical vapor deposition method for the GaAs thin film is disclosed, which is characterized in that, in the metal organic chemical vapor deposition method (MOCVD method) wherein arsine gas and organic gallium gas are allowed to react through thermal decomposition and GaAs crystals are deposited onto the GaAs substrate, the temperature of the substrate is raised to 700 to 800 DEG C and kept thereat when gas having the VI group element as an ingredient element such as hydrogen sulfide or the like is added to both source gases to deposit n-type GaAs crystals.