| 摘要 |
PURPOSE:To restrain a leakage current from being generated between storage capacitors and to double a storage capacity by a method wherein one pair of storage capacitors provided respectively with counter electrodes on both sides of storage electrodes are formed in one pair of groove parts between which one pair of transfer transistors are sandwiched. CONSTITUTION:One pair of groove parts 3a, 3b are formed inside a semiconductor substrate 1 where elements have been isolated. The following are provided: a first storage capacitor and a second storage capacitor C1, C2 which have been formed in the first groove part and the second groove part 3a, 3b; and one pair of transfer transistors T1, T2 which have been formed in a region on the substrate 1 between the first groove part and the second groove part 3a, 3b. The individual transfer transistors T1, T2 are composed of gate electrodes G1, G2, sources S1, S2 and a common drain D. The individual storage capacitors C1, C2 are composed of the following: a first storage electrode and a second storage electrode 7a, 7b which are stretched respectively from the sources S1, S2 of the individual transfer transistors T1, T2; and a first counter electrode and a second counter electrode 5a, 11a or the first counter electrode and a third counter electrode 5a, 11b which are faced via the first storage electrode and the second electrode 7a, 7b and via a first capacity insulating film and a second capacity insulating film 6, 10. |
