Electronic devices.

摘要

In the production of micron-size pyramid emitters for field emission devices, a first layer (2) of electrically-conductive material, such as single crystal silicon or metal, is etched to form column-like structures each of which tapers from each end of the column towards an intermediate portion along its length. A second conductive layer (15) is formed in contact with the free ends of the columns, and etching of the columns is then resumed until the intermediate portion of each column is etched through, leaving a pair of pyramid emitters (16,17) pointing towards one another and supported by the respective conductive layer.