| 摘要 |
PURPOSE:To obtain a recording material superior in photoelectric conversion efficiency and photosensitivity, by forming a charge transfer layer, a transition layer, and a photoconductive layer on a substrate, and giving a proper optical band gap. CONSTITUTION:A 2-80mum thick charge transfer layer 2 made of amorphous hydrogenated and/or fluorinated silicon carbide, and when needed, having >=10<13>ohm.cm dark resistivity due to doping with an element of IIIA of the periodic table; a 50Angstrom -2mum thick transition layer made of amorphous hydrogenated and/or fluorinated silicon ; and a 2,500Angstrom -10mum thick photoconductive layer made of amorphous hydrogenated and/or fluorinated silicon are laminated on a conductive substrate 1. An optical band gap between the layers 2 and 3 is controlled to <=0.3eV and that between the layers 2 and 4 is regulated to >=0.3eV. |
