| 摘要 |
PURPOSE:To realize a semiconductor device having a quantum fine wire structure by making the device to have a semiconductor layer formed on insulating substrates, thermally oxidized film 6 formed on the semiconductor layer, and gate electrode formed on the side face of the semiconductor layer and specifying the channel width by means of the thickness of the semiconductor layer. CONSTITUTION:This semiconductor device is provided with a semiconductor layer 5 formed on insulating substrates 2, 4, and 3, the thermally oxidized film 6 of the layer 5 formed on the layer 5, and gate electrode 11 formed on the side face of the layer 5 and the channel width is specified by means of the thickness of the layer 5. In addition, the thin film of the layer 5 is formed by thermally oxidizing the layer 5 formed on the insulating substrates 2, 4, and 3 and the electrode 11 is formed on the side face of the layer 5 after the layer 5 is selectively removed. For example, the thin film of the layer 5 is formed to a p-type Si layer 5 having a thickness of about 200Angstrom and the gate electrode 11 is formed on the side face of the layer 5 with a gate SiO2 film 9 in between. Then an n<+>-type source area 12 and drain area 13 are respectively formed on the Si layer 5 on both sides of the electrodes 11. |
