| 摘要 |
<p>PURPOSE:To obtain a highly accurate pattern composed of an X-ray absorbing material and to prevent a residue of the X-ray absorbing material from existing inside the pattern by a method wherein an organic substance film is formed on an SiC film and is flattened, a whole-face etching operation is executed, the surface of the SiC film is flattened and, thereafter, a mask pattern is formed on the SiC film. CONSTITUTION:A polycrystalline or single-crystal SiC film 2 used as a membrane is grown on a silicon substrate 1; then, an organic substance film is formed on the SiC film 2 and is flattened. Then, a whole-face etching operation is executed from the surface of the organic substance film; the surface of the SiC film 2 is flattened; after that, a mask pattern 5 composed of an X-ray absorbing material is formed on the SiC film 2. Alternatively, a polycrystalline or single-crystal SiC film 2 is grown on a silicon substrate 1; then, a plasma treatment is executed by using a mixed gas of an inert gas and a hydrocarbon; and while the surface of the SiC film 2 is being executed, an amorphous carbon film 3 is grown and flattened. Thereafter, a mask pattern 5 composed of an X-ray absorbing material is formed on the amorphous carbon film 3.</p> |
