| 摘要 |
PURPOSE:To obtain a blue laser element, etc., by applying to a II-VI compound semiconductor, etc., so that the electron beam excitation method may be applied to compactly and while eliminating an improper influence due to heat by directly irradiating electron beam radiated from an electric field radiation type electron source to an active layer which makes the semiconductor etc. as an active substance for excitation. CONSTITUTION:An electron beam radiated from an electric field radiation type electron source 6 is directly irradiated to an active layer 3 which makes a semiconductor or other solid bodies as an active substance for excitation. For example, an n-type ZnSe (Thickness: 0.1mum) active layer 3 is subjected to epitaxial growth by the MOVPE method, MBE method, etc, on a p-type on, n-type high-doped GaAs substrate 1 through an n-type ZnS (Thickness: 1mum) cladding layer 2. Then, the active layer a and multi-chip electric field radiation type electron sources 6 and 7 are placed opposingly through an insulation film 4 which is a vacuum space 8, leaving only the periphery and scooping out the inside, thus achieving excitation and emission of light of the active layer 3 by electron beam radiated by electric field applied between them. |
