发明名称 Continuous chemical vapour deposition system.
摘要 <p>A continuous chemical deposition reactor system transfers semiconductor wafers through a reactor having a plurality of process chambers (25). A cassette (20) of wafers is placed for access by a robotic arm (21). Robotic arm (21) lifts wafers from cassette (10) and places them in carriers (22), which move along tracks (33). Junctions (25a) join chambers (25) and allow for introduction and exhaust of process gases. An enclosure (37) surrounds the entire reactor.</p>
申请公布号 EP0378815(A2) 申请公布日期 1990.07.25
申请号 EP19890123167 申请日期 1989.12.14
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 ISHII, KAORU;WILKINSON, THOMAS F.;MOROI, MASAYUKI
分类号 C23C16/44;C23C16/455;C23C16/54;H01L21/00;H01L21/205;H01L21/31 主分类号 C23C16/44
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